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It is reported that ZTE will use the CCS system to develop heterogeneous epitaxial growth of gallium nitride ("CB-GaN") technology on silicon chips. Since 2001, ZTE's R&D team has successfully developed a number of unique gallium nitride and aluminum gallium indium phosphide LED technologies. Today, this comprehensive laboratory covering epitaxial growth to equipment processing and packaging has become one of Taiwan's leading R&D centers.
Professor Wu of the Department of Materials Science and Engineering of ZTE University commented: “Ai Siqiang’s Near Coupling Sprinkler® System is the perfect choice for the study of silicon-based GaN. Professor Hong from the Precision Engineering Institute of ZTE University added: “This The reactors are adaptable and easy to operate, and can achieve the reproducibility of a series of parameters we need, which will provide us with the ability to produce high quality silicon-based GaN epitaxial wafers and other new structures. †
Taiwan's Chung Hsing University Orders Ai Siqiang CCS MOCVD System for Silicon-Based Gallium Nitride Research and Development
On June 26, Ai Siqiang announced that ZTE University of Taiwan has ordered a 3x2 inch chip size near-coupling head® (CCS) MOCVD system.