21ic News TDK Co., Ltd. has developed a small and thin film power inductor for mobile device power circuits, and has been mass-produced since September 2012. This article refers to the address: http:// The mobile phone market is rapidly transforming into high-performance, versatile smartphones. This requires an inductor for a power supply circuit DC-DC converter to have a high rated current characteristic, and at the same time, due to the space saving of the circuit, the external size is also required to be small and thin. The mainstream of the inductor core material is ferrite, and the product uses a high-saturation magnetic flux density metal magnetic material using TDK's original material technology. Its rated current is about 2 times that of the previous product, and it has stable DC overlap characteristics. In addition, with the wafer-based TDK's original thin film technology, a coil pattern with higher precision is formed, and the electroplating generation technology is fully utilized to reduce the DC resistance that causes loss of power efficiency. The smart phone is equipped with a plurality of power inductors. By using this product, power loss can be suppressed to save power and the battery life can be extended. To fully meet the requirements for electrical characteristics and form factor, TDK has expanded its product range to include the smallest size of 1.6 x 0.8 x 1.0 (L x W x H mm in the inductor industry with metal magnetic materials as the core material). The same as below), and 2.5 × 2.0 × 1.0 (same), 2.0 × 1.6 × 1.0 (same), 2.0 × 1.2 × 1.0 (same) and the like. Inductance values ​​range from 0.47 to 2.2μH and current ratings range from 4.0 to 0.8A, resulting in a wide range of products. main application Smartphone, tablet Power supply circuit of module components, etc. Main features and advantages Use a metal material on the magnetic body to achieve high current Small and thin and low DC resistance by applying thin film technology Main characteristics The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage. Schottky Diode,Schottky barrier diode,schottky rectifiers, Barrier Schottky,SiC Schottky Rectifier,diodes inc Changzhou Changyuan Electronic Co., Ltd. , https://www.changyuanelectronic.com
The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.
Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.