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International Rectifier Corporation today introduced a family of automotive qualified power MOSFETs housed in a rugged TO-220 FULLPAK automotive application that includes Bala's brushless motors, pumps and cooling systems.
The standard and logic level of the new 55V planar device gate drive MOSFET N and P channel configuration, S and provide low as 8mOhm maximum on-resistance (RDS(ON)). The use of the TO-220 FULLPAK package eliminates the need for additional insulation hardware, simplifies design, and increases overall system reliability.
"Based on IR's proven planar technology, this new family's MOSFET S1 TO-220 FULLPAK package performs well in a rugged, reliable automotive application MOSFET when driving a linear mode with high inductive loads," said Ji Fengqin, Product Manager, Automotive MOSFET S, IR Automotive Products Division.
The average test of IR's automotive MOSFET's trumpet dynamic and static parts combines 100% automatic wafer-level vision inspection as IR's automotive quality against zero defects. Active AEC-Q101 qualification requirements, there is no more than 10% change in RDS (top) after 1000 temperature cycling tests. However, the new AU Bill of Materials for the Extended Test IR shows a maximum RDS of less than 10% (above) at 5,000 temperature cycle transitions, showing the strength and durability of the bill of materials.
The new device meets the AEC-Q101 standard and is environmentally friendly, lead-free and RoHS compliant.
Qualified automotive power MOSFET
The standard and logic level of the 55V planar device gate drive MOSFET N and P channel configuration, S and provide low as 8mOhm maximum on-resistance (RDS (ON)). The use of the TO-220 FULLPAK package eliminates the need for additional insulation hardware, simplifies design, and increases overall system reliability.