At present, Japan Nichia Corporation monopolizes the patented technology of GaN-based LEDs on sapphire substrates. CREE Corporation of the United States monopolizes the patented technology of GaN-based LEDs on SiC substrates. Therefore, the development of GaN-based LED production technology on other substrates has become a hot spot in the world. 1 Si substrate LED chip manufacturing 1.1 Technical route GaN was grown on a Si substrate to fabricate an LED blue chip. Process flow: growing AlN buffer layer on Si substrate→ growing n-type GaN→ growing InGaN multi-quantum well light-emitting layer→ growing P-type AlGaN layer→ growing p-type GaN layer→ bonding Ag reflective layer and forming p-type ohmic contact Electrode → stripping the substrate and removing the buffer layer → making an ohmic contact electrode of an n-type doped Si layer → alloy → passivation → dicing → testing → packaging. 1.2 Main manufacturing processes The structure of the GaN-based LED chip on the si substrate is shown in Fig. 1. Figure 1 Schematic diagram of GaN-based LED chip on si substrate Ningbo Xingchuangzhi Electric Appliance Co.,Ltd. , https://www.xingchuangzhi.com